Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

P Wolfram, E Steimetz, W Ebert, B Henninger… - Journal of Crystal …, 2003 - Elsevier
Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the
MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured …
被引用次数：16 相关文章 所有 6 个版本

Routine growth of InP based device structures using process calibration with optical in-situ techniques

P Wolfram, E Steimetz, W Ebert, N Grote… - Journal of crystal …, 2004 - Elsevier
Combined reflectance R and reflectance anisotropy spectroscopy (RAS) was applied for in
situ monitoring of composition and growth rate of MOVPE grown In1− xGaxAs1− yPy layers …
被引用次数：16 相关文章 所有 6 个版本

In situ reflectance monitoring of InP/InGaAsP films grown by metalorganic vapor phase epitaxy

RM Lum, ML McDonald, JC Bean, J Vandenberg… - Applied physics …, 1996 - pubs.aip.org
We report the use of in situ reflectance spectroscopy for real‐time monitoring of the
metalorganic vapor phase epitaxy (MOVPE) growth of InGaAsP films. In situ optical …
被引用次数：19 相关文章 所有 5 个版本

In-situ monitoring during MBE growth of InAs based heterostructures

K Bhatnagar, J Rojas-Ramirez, M Caro… - Journal of Crystal …, 2015 - Elsevier
The use of reflectance anisotropy spectroscopy (RAS) for the real time monitoring of the
growth of InAs based heterostructures by molecular beam epitaxy within the photon energy …
被引用次数：6 相关文章 所有 3 个版本

AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response

MM Habchi, A Rebey, B El Jani - Microelectronics journal, 2008 - Elsevier
We have investigated in situ monitoring of growth rate and refractive index by laser
reflectometry during InGaAs on GaAs (001) substrate growth in atmospheric pressure …
被引用次数：10 相关文章 所有 6 个版本
[PDF] academia.edu

MOVPE growth of (Al, Ga) InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

K Haberland, A Bhattacharya, M Zorn… - Journal of Electronic …, 2000 - Springer
Using a specially-designed spectrometer enabling combined reflectance anisotropy
spectroscopy (RAS) and reflectance measurements on rotating substrates in a commercial …
被引用次数：23 相关文章 所有 12 个版本

Highly uniform AlGaAsGaAs and InGaAs (P) InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor

X Zhang, I Moerman, C Sys, P Demeester… - Journal of Crystal …, 1997 - Elsevier
Highly uniform AlGaAs GaAs and InGaAs (P) InP epitaxial layers have been grown in a
vertical rotating susceptor MOVPE reactor capable of accommodating three 2′ wafers. The …
被引用次数：17 相关文章 所有 9 个版本

Optically induced low photoluminescence regions in InGaAsP

T Fukui, Y Horikoshi - Japanese Journal of Applied Physics, 1979 - iopscience.iop.org
InGaAsP epitaxial layers were excited by a Nd: YAG laser (λ= 1.064 µm), directly, or through
InP cladding layers. The photoluminescence intensity pattern of the InGaAsP active layer in …
被引用次数：8 相关文章 所有 6 个版本

Metalorganic vapor phase epitaxical growth and 1.5‐μm laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine

M Ogasawara, K Sato, Y Kondo - Applied physics letters, 1992 - pubs.aip.org
High‐quality InGaAsP lattice matched to InP was grown by low‐pressure metalorganic vapor
phase epitaxy using ethyldimethylindium (EDMIn), tertiarybutylphosphine (TBP), and …
被引用次数：12 相关文章 所有 5 个版本

Large-and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere

H Roehle, H Schroeter-Janssen, R Kaiser - Journal of crystal growth, 1997 - Elsevier
Layer structures comprising InP and InGaAsP were compared when grown using nitrogen
versus hydrogen as carrier gas. Under nitrogen a remarkable improvement in layer …
被引用次数：20 相关文章 所有 8 个版本