Over the last ten years the quality of both bulk and epitaxial InP has improved substantially
and the material is now receiving a great deal of attention as its properties are utilized in a …

InP with doping levels as low as 8× 10 13 cm-3 and 300 K mobilities as high as 5744 cm
2/V· s has been grown without intentional doping, using trimethylindium (TMIn) and …

Diethylzinc (DEZnl was used. as a p-type dopant source during metalorganic molecular
beam epitaxy of G~. &x~.~~ As and InP. The incorporation efficiency of the Zn was less than …

The acceptor Zn is widely used as a p-type dopant in device formation in metalorganic vapor
phase epitaxy MOVPE in the InP/InGaAsP material system. Zn has a high solubility1, 2 …

High concentration Zn doping in InP grown by low‐pressure metalorganic chemical vapor
deposition (MOCVD) was investigated in terms of saturated Zn and hole concentrations. A …

Crystal growth of InP on GaAs by vapor phase epitaxy is reported. It is demonstrated that
good quality InP epitaxial layers with featureless surface morphology can be grown on GaAs …

Undoped Ga0. 5In0. 5P has been successfully grown by organometallic vapor‐phase
epitaxy on GaAs substrates with a free‐electron concentration of 1016 cm− 3 and a mobility …

Publisher Summary This chapter describes the recent progress made on the growth,
characterization, and application of indium phosphide (InP) and related compounds grown …

Doping experiments with zinc (Zn) in metalorganic vapor phase epitaxial (MOVPE) indium
phosphide (InP) layers have been performed in the carrier concentration range 1× 10 17< …

This work describes the low-pressure metalorganic chemical vapor deposition growth of
planar-doped InP epilayers using Si donors. Capacitance-voltage measurements and …