The growth of high quality InP and In 1− x Ga x As y P 1− y by gas source molecular beam
epitaxy is reported. 77 K mobilities up to 112,000 cm 2/V⋯ s for high purity InP have been …

We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs.
InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI) …

High quality InAsx p] _ x epitaxial layers were heteroepitaxially deposited on InP substrates
from the vapor phase using the hydride technique. For phosphorus rich alloys electron …

Crystal growth of InP on GaAs by vapor phase epitaxy is reported. It is demonstrated that
good quality InP epitaxial layers with featureless surface morphology can be grown on GaAs …

High-quality InP is grown on (100) InP substrates by molecular beam epitaxy using
triethylindium and red phosphorus. Introduction of hydrogen during growth is found to be …

Abstract High quality InP and Ga 1-x In x As layers have been grown on InP substrates using
MOVPE growth at atmospheric pressure. Excellent material quality has been obtained using …

Gas-source molecular beam epitaxy (GSMBE), designating the method where the group III
beams are derived from the evaporation of solid materials while the group V beams are …

Quaternaries of InGaAsP have been grown on GaAs substrates by Shigiyama et al. 1 and
two lattice-matched compositions were obtained, Reports have also been made of the …

InP grown by gas‐source molecular beam epitaxy at low temperature has been studied by
Hall effect and admittance spectroscopy measurements. Contrary to GaAs, InP grown at low …

Growth of very high quality unintentionally doped InP by low pressure metalorganic vapor
phase epitaxy using solid trimethylindium as the indium source is described. Hall mobilities …