InP crystals and GaN films were irradiated by swift heavy ions 86 Kr and 209 Bi with kinetic
energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5× 10 10 to 3.6× 10 12 …

Wurtzite GaN epilayers, grown on the c-plane of sapphire substrate, have been irradiated
with swift heavy ions at different energies and fluences, and thereafter studied by Raman …

Homogeneous radiation damage was induced in∼ 250-nm-thick In0. 18Ga0. 82N and Al0.
2Ga0. 8N films by irradiation with 8.9 MeV Bi33+ ions at room temperature. The ion fluence …

In this work, GaN epilayers, grown on (0 0 0 1) sapphire substrate, were studied under swift
heavy ion irradiation with a broad variety of projectiles at different energies. Several …

In this work a study of damage production in gallium nitride via elastic collision process
(nuclear energy deposition) and inelastic collision process (electronic energy deposition) …

Abstract In 0.18 Ga 0.82 N films were irradiated with 4 MeV 84 Kr and 8.9 MeV 209 Bi ions to
various fluences at room temperature. The irradiated films were analyzed by means of …

The structural modifications and the evolution of mechanical behavior of gallium nitride
(GaN) thin films irradiated by 92 MeV 129 Xe 23+ at different fluences have been …

Abstract In 0.15 Ga 0.85 N/GaN bilayers irradiated with 2.3 áMeV Ne and 5.3 áMeV Kr ions
at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro …

GaN is a material of strategic importance due to its versatility in high temperature, radiation
prone and chemical environments. The present study explores evolution of defects in GaN …

350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from∼
82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions …