We describe how the Bi content of Ga As 1− x Bi x epilayers grown on GaAs can be
controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth …

The incorporation of Bi is investigated in the molecular beam epitaxy growth of GaAs 1− x Bi
x. Bi content increases rapidly as the As 2: Ga flux ratio is lowered to 0.5 and then saturates …

The growth of III–V bismuthides is complicated by the low incorporation efficiency of Bi in
GaAs, leading either to the formation of metallic Bi droplets or low layer composition …

GaAs 1− x Bi x epilayers with bismuth concentrations up to x= 3.1% were grown on GaAs by
molecular beam epitaxy. The Bi content in the films was measured by Rutherford …

We have examined the mechanisms of droplet formation and Bi incorporation during
molecular beam epitaxy of GaAsBi. We consider the role of the transition from group-V-rich …

Abstract 100 nm thick GaAsBi layers were grown at a range of temperatures using both As 2
and As 4. Measurements of Bi incorporation based on room temperature …

GaAs 1-x Bi x has been grown at a substrate temperature (T sub) between 350 and 410 C by
molecular beam epitaxy. The relationship between GaBi molar fraction (x) evaluated by …

The growth of GaAsBi alloys is plagued by the appearance of Bi droplets due to excess Bi
that accumulates during growth. Here we present an alternate growth regime that kinetically …

We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …

We report the growth by molecular beam epitaxy of Ga Bi x As 1− x epilayers on (311) B
GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron …