We prepared Ni and Ni2Si Schottky contacts on lightly doped (5.5× 1015cm− 3) n-type 6H–
SiC and evaluated their thermal degradation after annealing in the temperature range of 750 …

Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the
electrical properties with microstructural change. The ohmic behavior was observed at …

The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-
resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was …

Nickel-based Schottky contacts to n-6H-SiC, subjected to various heat treatments, have
been studied by the capacitancevoltage technique, X-ray diffractometry and AES sputter …

High-temperature processing was used to improve the barrier properties of three sets of n-
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …

The structural and electrical characterisation of nickel contacts on n-type silicon carbide was
performed to improve the ohmic behaviour at high temperatures. The formation of nickel …

Using cross-sectional transmission electron microscopy (TEM), microstructural changes in
Ni contacts on n-type 4H–SiC as a function of annealing temperature were investigated …

The fabrication of low‐resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …

Electrical properties of Ni contacts on lightly doped n-type 4H-SiC were interpreted in terms
of changes in microstructure and atomic composition at the Ni/SiC interface. The effective …

There is still little consensus regarding why low contact resistivity is achieved when Ni on n-
type 4H-and 6H-SiC is annealed at temperatures of more than above 950° C. The objective …