We demonstrate reproducible formation of mesoporous germanium layers suitable for solar
energy applications by electrochemical etching in highly concentrated electrolytes. For long …

Porous germanium films with good adhesion to the substrate were produced by annealing
GeO 2 ceramic films in H 2 atmosphere. The reduction of GeO 2 started at the top of a film …

A series of hexagonal mesoporous germanium semiconductors with tunable wall thickness
is reported. These nanostructures possess uniform pores of 3.1− 3.2 nm, wall thicknesses …

Abstract Porous Germanium (PGe) has emerged as a promising material for applications
such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …

Germanium films several micrometers in thickness were electrochemically deposited on
silicon wafers for the first time without catalysts and at room temperature from a solution …

Germanium is electrodeposited in a template formed from a dried suspension of silica
spheres. The germanium completely fills the pores of the silica matrix. The semiconductor …

The extended analysis of influence of the surface hydrogen passivation degree on
morphology of mesoporous Ge (PGe) formed by Bipolar Electrochemical Etching technique …

In this study, we proposed a method to prepare GeO2 by treating porous Ge thin film with
thermal annealing in O2 ambient. After annealing, the morphological transformation from …

Porous germanium (PG) is prepared by a novel bipolar electrochemical etching (BEE)
technique; scanning electron microscopy (SEM) clearly reveals formation of a porous layer …

The blending of mesoporosity with the properties of semiconductors promises new types of
multifunctional nanomaterials. It would be particularly interesting to combine the shape …