Germanium (Ge) nanowires have been produced by electrochemical etching of single-
crystalline n-type Ge {100} in a HCl-containing aqueous electrolyte. Macropores could be …

The authors report on a technique of combining low temperature nanowire synthesis with
self-assembly of block copolymers in order to obtain a controlled array of nanowires. An …

We present here a controllable and affordable preparation of porous nanostructured
germaniums with interesting photo-responsive properties from GeO2 powder through an …

The extended analysis of influence of the surface hydrogen passivation degree on
morphology of mesoporous Ge (PGe) formed by Bipolar Electrochemical Etching technique …

We report results for the electrochemistry of the germanium (II) tri‐halide anions,[GeCl3]−,[
GeBr3]− and [GeI3]−, in supercritical difluoromethane containing 60 mm [NnBu4][BF4] at …

Germanium nanowires are produced by a novel approach, combining two well known
electrochemical and metal assisted chemical etching. The metal assisted etching procedure …

We report on a lithography-free self-organized inductively coupled plasma (ICP) etching
process to manufacture nanostructured Ge surfaces with a strong absorbance in the visible …

A method of germanium electrodeposition from a GeO 2-based aqueous solution into the
pore channels of anodic mesoporous silicon formed on n-type highly-doped (100) silicon …

Abstract Porous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a
releasable form (eg, free-standing PGe) by lithography-free metal-assisted chemical etching …

Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow
planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited …