Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow
planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited …

Regular mesoporous oxide materials have been widely studied,,,,,,, and have a range of
potential applications, such as catalysis, absorption and separation. They are not generally …

Materials that exhibit a high ratio of surface-to-bulk atoms are anticipated to have unique
optical and electronic properties.[1] Generally, such materials are semiconductors and have …

A rapid melt growth method was developed to produce Ge crystals including Ge pillars,
nanowires, and Ge-on-insulator. Amorphous Ge was deposited and patterned, then …

Thin films of pure Ge and ZrO2, composite Ge-ZrO2 layers and [Ge-ZrO2/ZrO2] 40
multilayers were fabricated by confocal radio frequency magnetron sputtering. The structural …

Ge epitaxial layers were grown by the GeI2 disproportionation reaction at 350~ on (110)
semi-insulating GaAs and Ge substrates. The epitaxial surfaces are comparable in quality to …

Recently, gradient porous silicon has been developed to meet the requirements of various
applications due to its unique physical and chemical properties. In this paper, the formation …

Single-crystal germanium films on silicon were prepared by electrodeposition and solid-
phase epitaxy. The germanium films were amorphous as-deposited and crystallized into …

III-V semiconductor materials for high-efficiency multi-junction solar cells are often grown on
germanium (Ge) substrates. However, apart from being considered as a rare element, Ge …

Ge nanofilms were deposited from aqueous solutions using the electrochemical analog of
atomic layer deposition (ALD). Direct electrodeposition of Ge from an aqueous solution is …