In this paper we present the extremely peculiar electrical properties of nanoporous Ge. A full
and accurate electrical characterization showed an unexpected and extremely high …

This paper reports about the mechanism of porous formation in bulk crystalline Ge wafers,
poly-crystalline and amorphous Ge thin films as a consequence of Ge+ ion implantation at …

Growing single‐crystal semiconductors directly on an amorphous substrate without epitaxy
or wafer bonding has long been a significant fundamental challenge in materials science …

Germanium (Ge) is a critical material for applications in space solar cells, integrated
photonics, infrared imaging, sensing, and photodetectors. However, the corresponding cost …

Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronics,
photovoltaics, and electronic devices. These devices are usually grown on thick and rigid Ge …

The high carrier mobility and large absorption coefficient at near-infrared wavelengths [1–5]
make germanium one of the most attractive semiconductor materials for a wide range of …

We first report the successful synthesis of porous germanium with ordered hierarchical
structures, via controlled etching, and show its performance as an anode in a new metal–air …

The goal of this work has been to fabricate very thin, highly porous Ir films, of use in a wide
variety of applications. To achieve this objective, Ir was electrodeposited on a Au-coated …

Mesoporous silicon (PSi) layer was used to create highly sensitive, electrically-based sensor
for detection of liquid ethanol at room temperature. The PSi nanostructure that is generated …

In the present work homoepitaxial Ge layers were deposited by means of metal organic
vapor phase epitaxy (MOVPE) on Ge using iso-butyl germane (iBuGe) as a metal organic …