Control of the microroughness of Ge surfaces is required to realize field‐effect transistors
with high performances. We propose a novel surface‐flattening process for Ge that involves …

Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has been achieved
over large areas with aqueous feedstock solutions using electrochemical liquid phase …

We explore here the use of an anodic alumina membrane as a mask for the fabrication of
highly ordered nanodots. The masks were synthesized using a two-step anodization …

In this paper, a low temperature deposition of germanium (Ge) films on silicon (Si) is
performed using Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF …

High-quality Ge films were grown on Si substrates by solid-source molecular beam epitaxy
using SiGe graded layer and Sb surfactant-mediation technique. Transmission electron …

Several Ge (II) and Ge (IV) compounds were investigated as possible reagents for the
electrodeposition of Ge from liquid CH3CN and CH2F2 and supercritical CO2 containing as …

A simple and fast technique to grow free standing, open ended germanium nanotubes is
demonstrated using template assisted electrodeposition from a room temperature ionic …

Crystallized Ge films have been produced in a plasma enhanced chemical vapor deposition
system by the decomposition of H2‐diluted GeH4 gas source while using the H2 plasma …

We present a new route for the fabrication of mesoporous silicon using Pt nanoparticle-
assisted chemical etching. In contrast to stain etching, the mesoporous silicon films show …

In this paper we report for the first time on the room temperature template synthesis of
germanium and silicon nanowires by potentiostatic electrochemical deposition from the air …