Chemical vapor deposition growth of graphene on 200 mm Ge (110)/Si Wafers and Ab Initio analysis of differences in growth mechanisms on Ge (110) and Ge (001)
F Akhtar, J Dabrowski, R Lukose… - … Applied Materials & …, 2023 - ACS Publications
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …
graphene on wafer scale is important. This work reports on the growth of large-scale …
Investigating the CVD synthesis of graphene on Ge (100): toward layer-by-layer growth
Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-
compatible processes. For future application in next generation devices the accurate control …
compatible processes. For future application in next generation devices the accurate control …
[HTML][HTML] Growth of single-layer graphene on Ge (1 0 0) by chemical vapor deposition
CD Mendoza, PG Caldas, FL Freire Jr… - Applied Surface …, 2018 - Elsevier
The integration of graphene into nanoelectronic devices is dependent on the availability of
direct deposition processes, which can provide uniform, large-area and high-quality …
direct deposition processes, which can provide uniform, large-area and high-quality …
Effect of Germanium Surface Orientation on Graphene Chemical Vapor Deposition and Graphene-Induced Germanium Nanofaceting
The synthesis of graphene directly on Ge and on Ge deposited on Si provides a scalable
route toward integrating graphene onto conventional semiconductors. Here, we elucidate …
route toward integrating graphene onto conventional semiconductors. Here, we elucidate …
Large-area high-quality graphene on Ge (001)/Si (001) substrates
I Pasternak, P Dabrowski, P Ciepielewski, V Kolkovsky… - Nanoscale, 2016 - pubs.rsc.org
Various experimental data revealing large-area high-quality graphene films grown by the
CVD method on Ge (001)/Si (001) substrates are presented. SEM images have shown that …
CVD method on Ge (001)/Si (001) substrates are presented. SEM images have shown that …
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates
M Lukosius, J Dabrowski, J Kitzmann… - … applied materials & …, 2016 - ACS Publications
Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible,
200 mm graphene was obtained on Ge (001)/Si (001) wafers in this work. Chemical vapor …
200 mm graphene was obtained on Ge (001)/Si (001) wafers in this work. Chemical vapor …
Graphene grown on Ge (0 0 1) from atomic source
Among the many anticipated applications of graphene, some–such as transistors for Si
microelectronics–would greatly benefit from the possibility to deposit graphene directly on a …
microelectronics–would greatly benefit from the possibility to deposit graphene directly on a …
In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der …
Breakthroughs in cutting‐edge research fields such as hetero‐integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …
the development of quantum devices are heavily bound to the control of misfit strain during …
High-Mobility Epitaxial Graphene on Ge/Si (100) Substrates
J Aprojanz, P Rosenzweig, TTN Nguyen… - … applied materials & …, 2020 - ACS Publications
Graphene was shown to reveal intriguing properties of its relativistic two-dimensional
electron gas; however, its implementation to microelectronic applications is missing to date …
electron gas; however, its implementation to microelectronic applications is missing to date …
[HTML][HTML] Graphene growth on Ge (100)/Si (100) substrates by CVD method
The successful integration of graphene into microelectronic devices is strongly dependent
on the availability of direct deposition processes, which can provide uniform, large area and …
on the availability of direct deposition processes, which can provide uniform, large area and …