Nanowires (NWs) have recently emerged as a new class of materials demonstrating unique
properties which may completely differ from their bulk counterparts. The main aim of this …

40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …

Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent
research tools for investigating the behavior of structures with sublithographic features as …

In this article and in its Part I, we investigate variability effects on the threshold voltage of
nanowire (NW) and Macaroni devices, focusing on random dopant fluctuations and random …

In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on
three demonstrative platforms: resistive switching memories, graphene nanogaps and single …

The low frequency (1∕ f) noise in single Sn O 2 nanowire transistors was investigated to
access semiconductor-dielectric interface quality. The amplitude of the current noise …

The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet
(NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking …

This work presents an evaluation of the Low-Frequency Noise (LFN) exhibited by short-
channel Junctionless Nanowire Transistors (JNTs). Unlike in previous works in which only …

A discussion of recently developed experimental methods for noise research in nanoscale
electronic devices, conducted by specialists in transport and stochastic phenomena in …

This article aims at proposing a compact analytical model for the low-frequency noise (LFN)
of junctionless nanowire transistors (JNTs), operating at different bias conditions and …