The optical properties of the Stranski–Krastanov (S–K) grown InAs/GaAsSb quantum dots
(QDs) coupled to sub-monolayer (SML) InAs QD stacks are investigated using …

We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-
monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and …

We have studied the material properties and device performance of InAs/GaAs quantum dot
solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (SK) …

We focused on design of suitable underlying and covering layers of InAs/GaAs quantum
dots (QDs) with the aim to increase the carrier extraction rate in the QD solar cell structures …

This work investigates the temperature dependence of the performance of In (Ga) As-based
solar cells made from sub-monolayer (SML) quantum dots (QDs), quantum wells (QWs), and …

We have fabricated and characterized InGaAs/GaAsSb quantum dots solar cells (QDSCs)
with a type-II band alignment structure. The photoluminescence (PL) spectrum indicates that …

We studied the different carrier kinetic mechanisms involved into the interband absorption of
quantum dots (QDs) by photocurrent spectroscopy. It was shown that in vertically coupled …

We present a study of the optical properties of InAs quantum dot (QD) solar cells (SC) grown
by molecular beam epitaxy on GaAs (11N) A orientation substrates (N= 4, 5). Optical …

This study demonstrates the feasibility of improving the performance of a quantum dot (QD)
intermediate band solar cell (SC) by capping an InGaAs layer on the InAs QDs and inserting …

Prototypes based on InAs/GaAs QDs have been manufactured in order to realize the
theoretically predicted high efficiency intermediate band solar cells (IBSCs). Unfortunately …