High-power high-efficiency 0.98-/spl mu/m wavelength InGaAs-(In) GaAs (P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy
MR Gokhale, JC Dries, PV Studenkov… - IEEE journal of …, 1997 - ieeexplore.ieee.org
We describe the design and experimental results for high-power, high-efficiency, low
threshold current, 0.98-/spl mu/m wavelength, broadened waveguide (BW) aluminum-free …
threshold current, 0.98-/spl mu/m wavelength, broadened waveguide (BW) aluminum-free …
Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps
Index‐guided self‐aligned InGaAs/GaAs/InGaP quantum well lasers are fabricated by gas‐
source molecular beam epitaxy in two growth sequences on a GaAs substrate for the first …
source molecular beam epitaxy in two growth sequences on a GaAs substrate for the first …
Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy
G Zhang, J Näppi, K Vänttinen, H Asonen… - Applied physics …, 1992 - pubs.aip.org
Strained‐layer InGaAs/GaAs/GaInP separate confinement heterostructure single‐quantum
well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold …
well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold …
Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers
MR Gokhale, PV Studenkov, J Wei… - IEEE Photonics …, 2000 - ieeexplore.ieee.org
We demonstrate high-performance Al-free InGaAsN-GaAs-InGaP-based long-wavelength
quantum-well (QW) lasers grown on GaAs substrates by gas-source molecular beam epitaxy …
quantum-well (QW) lasers grown on GaAs substrates by gas-source molecular beam epitaxy …
InGaAs/GaAs/InGaP multiple‐quantum‐well lasers prepared by gas‐source molecular beam epitaxy
We report on the first room‐temperature operation of aluminum‐free In0. 2Ga0.
8As/GaAs/In0. 49Ga0. 51P multiple‐quantum‐well lasers grown by gas‐source molecular …
8As/GaAs/In0. 49Ga0. 51P multiple‐quantum‐well lasers grown by gas‐source molecular …
Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼ 0.98 μm) grown by gas‐source molecular beam epitaxy
G Zhang, A Ovtchinnikov - Applied physics letters, 1993 - pubs.aip.org
We report on the first strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP separate‐
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …
High‐power InGaAs‐GaAs strained quantum well lasers with InGaP cladding layers on p‐type GaAs substrates
YK Sin, H Horikawa, T Kamijoh - Journal of applied physics, 1992 - pubs.aip.org
We report device results from channel guide InGaAs‐GaAs strained quantum well lasers
with In0. 49Ga0. 51P cladding layers (λ L= 980 nm). Channel guide lasers are demonstrated …
with In0. 49Ga0. 51P cladding layers (λ L= 980 nm). Channel guide lasers are demonstrated …
Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda approximately 980 nm) grown by gas-source MBE
G Zhang, A Ovtchinnokov, J Nappi… - IEEE journal of …, 1993 - ieeexplore.ieee.org
Aluminum-free strained-layer InGaAs/GaInAsP/GaInP separate-confinement-heterostructure
quantum-well lasers emitting at 980 nm have been demonstrated. In particular, optimization …
quantum-well lasers emitting at 980 nm have been demonstrated. In particular, optimization …
High T0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source
We demonstrate high performance,/spl lambda/= 1.3-and 1.4-μm wavelength InGaAsN-
GaAs-InGaP quantum-well (QW) lasers grown lattice-matched to GaAs substrates by gas …
GaAs-InGaP quantum-well (QW) lasers grown lattice-matched to GaAs substrates by gas …
High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by …
GW Yang, RJ Hwu, ZT Xu, XY Ma - IEEE journal of quantum …, 1999 - ieeexplore.ieee.org
We report on the material growth and fabrication of high-performance 980-nm strained
quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs …
quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs …