Optical interconnects are promising approaches for future short-distance communications
because electrical interconnects show severe limitations in terms of bandwidth and energy …

InP photonic circuits are becoming increasingly complex and require different layer-stacks
for different applications like interconnecting, switching or amplification. This integration …

Toward the realization of ultralow-power-consumption on-chip optical interconnection, two
types of membrane-based GaInAs/InP pin photodiodes were fabricated on Si host substrates …

InGaAsP three‐dimensional optical waveguides with p+‐n junctions are described. A p+‐
InGaAsP/n‐InGaAsP/n+‐InGaAsP double‐heterostructure rib‐type waveguide, which is …

In this letter, we present a sharp bend design for the InP-based photonic membrane, which
shows low loss and high tolerance. The traditional arc bends on InP membranes face high …

In this study, we investigate low-resistivity InGaAsP lateral P–I–N junctions using Ni–
InGaAsP alloy in conjunction with Zn diffusion. It is found that Ni–InGaAsP alloy is formed via …

Conference title, upper and lower case, bolded, 18 point type, centered Page 1 Heterogenous
InP Electro-Absorption Modulator with Si Waveguides for Beyond 200 Gbps/λ Optical …

The potentiality of H passivation in InP-based photonic device technology was investigated
by evaluating the properties of hydrogenated InP (Zn)/InGaAsP double heterostructure …

We propose an InGaAlAs waveguide pin photodiode (WG-PD) with a thick symmetric double-
core for surface-hybrid integration onto optical platforms, which can be applied to low cost …

Optoelectronic devices based on InGaAs/InP and InGaAsP/InP are the building blocks of
long-wavelength optical communication systems. While much progress has been made in …