An InGaAsP/InP integration platform with low loss deeply etched waveguides and record SOA
RF-linearity Page 1 An InGaAsP/InP Integration Platform with Low Loss Deeply Etched …

A physical model-based simulation is conducted to investigate the design of an efficient high-
speed quantum-well waveguide-photodetector (WGPD). The WGPD structure is optimized in …

We present and numerically analyze two schemes for efficient, large-bandwidth, and
fabrication-tolerant optical coupling of bonded III-V membrane active components to an …

We obtained uniform and high coupling efficiency for InGaAsP-InP buried heterostructure
(BH) optical amplifiers integrated with butt-coupled waveguides using reactive ion etching …

A systematic analysis of how CH4/H2 based reactive ion etching affects the optical and
electro‐optical properties of GaInAs/InP multiple quantum well pin diode strip‐loaded …

We demonstrate a novel InP-based photodiode structure with large active diameter (55 μm)
for> 25 Gbit/s operation at optical wavelengths which range from 0.85 to 1.55 μm. By utilizing …

Wafer bonding technology was investigated to integrate active photonic devices on a silicon-
on-insulator (SOI) substrate for highly compact photonic integrated circuits. A single …

The monolithic integration of a low loss InGaAlAs ridge waveguide with a low leakage
InGaAs photodiode is demonstrated. The structure has been grown by molecular beam …

In this work we review the reported results as well as the analytical and 3D numerical
modeling tools we used to analyze dark current and quantum efficiency data from lattice …

For uni-traveling carrier photodiodes (UTC-PDs) using InGaAs and InP as the absorber and
collector, an abrupt heterojunction at the absorber-collector interface may induce a large …