Dielectric functions and electronic structure of InAsxP1− x films on InP
The authors present room-temperature pseudodielectric function spectra of InAsxP1− x films
grown on 001 InP by chemical beam epitaxy. A wet-chemical etching procedure was used to …
grown on 001 InP by chemical beam epitaxy. A wet-chemical etching procedure was used to …
Growth of InGaAsP/InP-laser structures monitored by using RAS techniques
P Wolfram, E Steimetz, W Ebert, B Henninger… - Journal of Crystal …, 2003 - Elsevier
Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the
MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured …
MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured …
The status of current understanding of InP and InGaAsP materials
0 022-0248/8l/0000—0000/502.50 ©North-Holland Page 1 138 Journal of Crystal Growth 54
(1981)1 38—149 North-Holland Publishing Company THE STATUS OF CURRENT …
(1981)1 38—149 North-Holland Publishing Company THE STATUS OF CURRENT …
Metalorganic vapor phase epitaxical growth and 1.5‐μm laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine
M Ogasawara, K Sato, Y Kondo - Applied physics letters, 1992 - pubs.aip.org
High‐quality InGaAsP lattice matched to InP was grown by low‐pressure metalorganic vapor
phase epitaxy using ethyldimethylindium (EDMIn), tertiarybutylphosphine (TBP), and …
phase epitaxy using ethyldimethylindium (EDMIn), tertiarybutylphosphine (TBP), and …
Preparation and Optical Properties of InAs1−xPx Alloys
AG Thompson, JE Rowe, M Rubenstein - Journal of Applied Physics, 1969 - pubs.aip.org
Homogeneous polycrystalline InAs1− x P x alloys have been prepared by a halogen vapor‐
transport closed‐tube technique over the entire range of composition. Electroreflectance …
transport closed‐tube technique over the entire range of composition. Electroreflectance …
[PDF][PDF] Undoped semi-insulating indium phosphide (InP) and its applications
H Dong, Y Zhao, J Jiao, Y Zeng, J Li… - CHINESE SCIENCE …, 2003 - researchgate.net
During the past several years, the research and development of InP material has made great
progress due to serving as the substrate for most optoelectronic devices operating at the …
progress due to serving as the substrate for most optoelectronic devices operating at the …
InGaAsP laser diodes
GH Olsen - Optical Engineering, 1981 - spiedigitallibrary.org
The advantages and properties of InGaAsP laser diodes in the 1.0 to 1. 7 um spectral region
are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating …
are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating …
Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures
This paper presents a study on the effect of matrix material on the morphology and optical
properties of self-assembled InP-based InAsSb nanostructures. Due to the differences in …
properties of self-assembled InP-based InAsSb nanostructures. Due to the differences in …
[引用][C] Band structure of InP: Overview
EP O'Reilly - EMIS DATAREVIEWS SERIES, 2000 - INSPEC PUBLICATION
Optical absorption and emission of InP1−xSbx alloys
EH Reihlen, MJ Jou, ZM Fang… - Journal of applied …, 1990 - pubs.aip.org
A detailed optical study of the metastable III/V semiconductor alloy InP1− x Sb x is
presented. InP1− x Sb x layers are grown throughout the entire compositional range by …
presented. InP1− x Sb x layers are grown throughout the entire compositional range by …