Structural and optical properties of strain‐relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP (001) using tertiarybutylarsine
P Desjardins, M Beaudoin, R Leonelli… - Journal of applied …, 1996 - pubs.aip.org
A combination of transmission electron microscopy and high‐resolution x‐ray diffraction
analyses has been used to determine the exact strain in each layer of InAsP/InP multiple …
analyses has been used to determine the exact strain in each layer of InAsP/InP multiple …
[PDF][PDF] Integrated circuits
I Circuits, II Apple - A CASCADABLE, MONOLITHIC LASER …, 1997 - apps.dtic.mil
We discuss approaches to achieving large scale InP-based optoelectronic integrated circuits
(OEICs) and photonic integrated circuits (PICs). During the past several years, significant …
(OEICs) and photonic integrated circuits (PICs). During the past several years, significant …
[HTML][HTML] Advances in InP and competing materials
M Telford - III-Vs Review, 2001 - Elsevier
This May's 13th Indium Phosphide and Related Materials conference (IPRM'01) in Nara,
Japan attracted a record 470 delegates, despite the slowdown in the industry (perhaps due …
Japan attracted a record 470 delegates, despite the slowdown in the industry (perhaps due …
1.5? 1.7? m vpe InGaAsP/InP cw lasers
GH Olsen, TJ Zamerowski, NJ Digiuseppe - Electronics Letters, 1980 - infona.pl
1.5?1.7 ?m vpe InGaAsP/InP cw lasers × Close The Infona portal uses cookies, ie strings of
text saved by a browser on the user's device. The portal can access those files and use them to …
text saved by a browser on the user's device. The portal can access those files and use them to …
InAsPSb/InAs diode laser emitting in the 2.5 μm range
S Akiba, Y Matsushima, T Iketani… - Electronics …, 1988 - waseda.elsevierpure.com
InAsPSb/InAs diode laser emitting in the 2.5μm range — Waseda University Skip to main
navigation Skip to search Skip to main content Waseda University Home Waseda University …
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Features of InGaAlAs/InP heterostructures
A Ramam, SJ Chua - Journal of Vacuum Science & Technology B …, 1998 - pubs.aip.org
InGaAlAs epilayers lattice matched to an InP substrate are grown by molecular beam epitaxy
with band gap energies varying in the range 0.8–1.42 eV. The I–V/C–V characteristics of the …
with band gap energies varying in the range 0.8–1.42 eV. The I–V/C–V characteristics of the …
Band alignment of InAs1− xSbx (0.05< x< 0.13)/InAs0. 67P0. 23Sb0. 10 heterostructures
CJ Wu, G Tsai, HH Lin - Applied Physics Letters, 2009 - pubs.aip.org
We determined the unstrained conduction-band and valence-band edge energies of InAs 1−
x Sb x (0.05< x< 0.13) by fitting the photoluminescence peak energy of InAsSb/InAs 0.67 P …
x Sb x (0.05< x< 0.13) by fitting the photoluminescence peak energy of InAsSb/InAs 0.67 P …
Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN
Indium incorporation and the optical properties of In x Al 1− x N layers (0≤ x≤ 0.45) grown
by metal-organic vapour phase epitaxy have been investigated simultaneously on polar …
by metal-organic vapour phase epitaxy have been investigated simultaneously on polar …
Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1− xAsyP1− y Alloys
M Razeghi - Semiconductors and Semimetals, 1985 - Elsevier
Publisher Summary This chapter discusses that metallo-organic chemical vapor deposition
(MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of …
(MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of …