InGaAlAs epilayers lattice matched to an InP substrate are grown by molecular beam epitaxy
with band gap energies varying in the range 0.8–1.42 eV. The I–V/C–V characteristics of the …

Indium incorporation and the optical properties of In x Al 1− x N layers (0≤ x≤ 0.45) grown
by metal-organic vapour phase epitaxy have been investigated simultaneously on polar …

Over the last ten years the quality of both bulk and epitaxial InP has improved substantially
and the material is now receiving a great deal of attention as its properties are utilized in a …

Lattice-matched InGaAs on (100) InP was grown by molecular beam epitaxy with arsenic
dimers (As2) at a growth temperature (Tg) range of 250–470° C. Measurements of double …

Indium arsenide is a direct gap semiconductor (0.36 eV at 300 K and 0.40 eV at 77 K) with
high electron mobility (greater than 20 000 cm 2 Vt-1 s− 1 at 300 K and approximately 60 …

We report the growth and characterization of ultrapure InP using trimethylindium and
phosphine by atmospheric pressure organometallic vapor phase epitaxy (APOMVPE). The …

Publisher Summary This chapter reviews InGaAsP/InP laser structures and their
performance characteristics. The choice of a laser structure for a given application is …

The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence
(PL) of n‐type InGaAsP is investigated. These layers, epitaxially grown on InP substrates …

We have investigated the characteristics of molecular beam epitaxial Ino:;}(Gax AI, x) 047
As/InP waveguides and phase modulators in the 1.15-1. 3 Itm wa ve1ength range. Loss at …

The most recent advances in III–V semiconductors, from wide band gap AlN to the new
narrow band gap InTlSb material, are examined. Specifically, results for AlN, GaN, and their …