Optical properties of InGaAs lattice‐matched to InP
TW Nee, AK Green - Journal of applied physics, 1990 - pubs.aip.org
The optical spectra of a molecular‐beam‐epitaxially grown In0. 53Ga0. 47As epilayer lattice‐
matched on a (100) InP substrate are measured in the visible and infrared regions. The …
matched on a (100) InP substrate are measured in the visible and infrared regions. The …
Light emitting diodes for the spectral range λ= 3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20 …
M Aidaraliev, NV Zotova, SA Karandashev, BA Matveev… - Semiconductors, 2001 - Springer
Light-emitting diodes (LEDs) based on pn homo-and heterostructures with InAsSb (P) and
InGaAs active layers have been designed and studied. An emission power of 0.2 (λ= 4.3 µm) …
InGaAs active layers have been designed and studied. An emission power of 0.2 (λ= 4.3 µm) …
Temperature dependence of photoluminescence of n‐InGaAsP
H Temkin, VG Keramidas, MA Pollack… - Journal of applied …, 1981 - pubs.aip.org
The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence
(PL) of n‐type InGaAsP is investigated. These layers, epitaxially grown on InP substrates …
(PL) of n‐type InGaAsP is investigated. These layers, epitaxially grown on InP substrates …
Study of the valence band offsets between InAs and InAs1-xSbx alloys
EH Steenbergen, OO Cellek… - Quantum Sensing …, 2012 - spiedigitallibrary.org
InAs/InAs 1-x Sb x strain-balanced superlattices (SLs) on GaSb are a viable alternative to
the well-studied InAs/Ga 1-x In x Sb SLs for mid-and long-wavelength infrared (MWIR and …
the well-studied InAs/Ga 1-x In x Sb SLs for mid-and long-wavelength infrared (MWIR and …
High quality InP and In1− xGaxAsyP1− y grown by gas source MBE
M Lambert, L Goldstein, A Perales, F Gaborit… - Journal of crystal …, 1991 - Elsevier
The growth of high quality InP and In 1− x Ga x As y P 1− y by gas source molecular beam
epitaxy is reported. 77 K mobilities up to 112,000 cm 2/V⋯ s for high purity InP have been …
epitaxy is reported. 77 K mobilities up to 112,000 cm 2/V⋯ s for high purity InP have been …
Exploration of entire range of III–V semiconductors and their device applications
M Razeghi, YH Choi, X He, CJ Sun - Materials science and …, 1995 - Taylor & Francis
The most recent advances in III–V semiconductors, from wide band gap AlN to the new
narrow band gap InTlSb material, are examined. Specifically, results for AlN, GaN, and their …
narrow band gap InTlSb material, are examined. Specifically, results for AlN, GaN, and their …
Ga1-xinxas - inp abrupt heterostructures grown by MOVPE at atmospheric pressure
JP Andre, EP Menu, M Erman, MH Meynadier… - Journal of electronic …, 1986 - Springer
Abstract High quality InP and Ga 1-x In x As layers have been grown on InP substrates using
MOVPE growth at atmospheric pressure. Excellent material quality has been obtained using …
MOVPE growth at atmospheric pressure. Excellent material quality has been obtained using …
Comparison of single-and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs
I Ladany, FZ Hawrylo - Journal of Crystal Growth, 1981 - Elsevier
Two well known methods for growth of InGaAsP/InP material for emitters operating in the 1.3
μm range are the single phase method, in which accurately equilibrated melts used, and the …
μm range are the single phase method, in which accurately equilibrated melts used, and the …
Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy
GO Munns, WL Chen, ME Sherwin, D Knightly… - Journal of crystal …, 1994 - Elsevier
It has generally been recognized that sources of the highest purity facilitate growth of InP
and InAlAs with excellent optical and electrical characteristics. The mobility …
and InAlAs with excellent optical and electrical characteristics. The mobility …