The time responses of the photorefractive effect in semi-insulating InP doped with Fe and
CdTe doped with In are measured. Using microjoule infrared pulses, gratings can be written …

Measurements and theoretical calculations are presented for the photorefractive effect in
three semi-insulating semiconductors (GaAs: EL2, InP: Fe, and CdTe: V) using 29-psec …

We present a new model, which incorporates both temperature and electron–hole effects, for
two-beam coupling in photorefractive semiconductors under an external dc field E_0. We …

At wavelengths close to the band edge, strong photorefractive gratings using the Franz–
Keldysh electrorefractive effect can be written in semiconductors. Two‐beam‐coupling …

The photorefractive effect is an extremely versatile nonlinear mechanism for parallel optical
processing. Applications such as image amplification, real-time interferometry, convolution …

The photorefractive recording dynamics of two-beam coupling in semi-insulating
semiconductors by beams with slightly different frequencies are studied theoretically and …

The steady-state and dynamic behavior of absorption and phase gratings in semi-insulating
GaAs and InP have been studied by four-wave mixing. These measurements permit …

Semiconductors as photorefractive materials sensitive to infrared light are among others
advantageous since they have small response times. Typically these time constants are in …

Two-wave mixing experiments demonstrate amplification of optical signals using the
photorefractive effect in InP: Fe. Signal beam amplification was obtained at both 1.06 μm …

The dependence of a two-beam coupling gain on the grating period in Fe-doped InP is
characterized. I measure gains as large as 4 cm^− 1 at 1.06 μm for an applied field of 8 kV …