Probing the bandstructure dependent figures of merit in InAs/GaAs quantum dot photodetectors
The performance parameter of quantum dot (QD) devices can be well controlled and
optimized with the variation of dot size. This is inherently due to the size dependent …
optimized with the variation of dot size. This is inherently due to the size dependent …
Minimization of bandstructure dependent dark current in InAs/GaAs quantum dot photodetectors
H Rajanna, K Ghosh - Superlattices and Microstructures, 2021 - Elsevier
The paper presents a theoretical model which illustrates the electron capture and emission
dynamics in InAs/GaAs quantum dot (QD) photodetector and describes the bandstructure …
dynamics in InAs/GaAs quantum dot (QD) photodetector and describes the bandstructure …
Calculations of bandstructures on the lens and pyramid-shaped InAs quantum dot for confirming the photoluminescence and photoresponse
TH Huang, SF Tang, TC Chen, FF Lu… - Quantum Sensing …, 2007 - spiedigitallibrary.org
Electronic and optical properties of ideal and real quantum dots (QDs) are extensively
studied and derived for the recent decade. Strain caused by the differences of the lattice …
studied and derived for the recent decade. Strain caused by the differences of the lattice …
Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure
InAs/GaAs quantum dot photodetector photoresponse spectra consist of quantum dot,
wetting layer and GaAs components, however, they frequently contain features attributed to …
wetting layer and GaAs components, however, they frequently contain features attributed to …
Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3
The potential of InAs quantum-dot (QD) photodetectors for room-temperature high-speed
operation at wavelengths near 1.3 μm is evaluated. Specifically, planar metal-semiconductor …
operation at wavelengths near 1.3 μm is evaluated. Specifically, planar metal-semiconductor …
Enhanced luminescence from InAs/GaAs quantum dots
PO Holtz, ES Moskalenko, M Larsson… - Optical Materials in …, 2006 - spiedigitallibrary.org
Single quantum dots (QDs), based on the InAs/GaAs material system have been
characterized by micro-photoluminescence (μPL). The self-organized quantum dots studied …
characterized by micro-photoluminescence (μPL). The self-organized quantum dots studied …
[PDF][PDF] Intersubband transitions in the quantum dot layers for quantum confined photodetector
SF Tang, TC Chen, SY Lin, HY Tu - Cutting Edge Nanotechnology, 2010 - Citeseer
In nanostructure like quantum dots (QDs) embedded in the spacing layer with high energy
barrier, where electrons are three-dimensionally confined into nanometer-scale …
barrier, where electrons are three-dimensionally confined into nanometer-scale …
Temperature dependence of quantum efficiency in Quantum Dot Infrared Photodetectors
SY Wang, HS Ling, CP Lee - Infrared Physics & Technology, 2011 - Elsevier
The behavior of quantum efficiency in QDIPs was studied in details with simple InAs/GaAs
QDs and DWELL QDs structures. Despite of the large difference of the excited state energy …
QDs and DWELL QDs structures. Despite of the large difference of the excited state energy …
Impact of quantum dot parameters on the performance of p-type quantum dot infrared photodetectors
In this work, the impact of the quantum dot parameters, including dot size, and material
composition on the optoelectronic performance of quantum dot infrared photodetectors …
composition on the optoelectronic performance of quantum dot infrared photodetectors …
High-speed InAs quantum dot photodetectors for data/telecom
The extraordinary properties of quantum dots (QDs) have been intensively investigated
since the 1990s, with particular emphasis on their wide range of applications to information …
since the 1990s, with particular emphasis on their wide range of applications to information …