Power amplifiers for mm-wave 5G applications: Technology comparisons and CMOS-SOI demonstration circuits

PM Asbeck, N Rostomyan, M Özen… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …

A review of technologies and design techniques of millimeter-wave power amplifiers

V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …

A review of 5G power amplifier design at cm‐wave and mm‐wave frequencies

DYC Lie, JC Mayeda, Y Li… - … and Mobile Computing, 2018 - Wiley Online Library
The 5G wireless revolution presents some dramatic challenges to the design of handsets
and communication infrastructures, as 5G targets higher than 10 Gbps download speed …

High-power generation for mm-wave 5G power amplifiers in deep submicrometer planar and FinFET bulk CMOS

S Daneshgar, K Dasgupta, C Thakkar… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
A review is presented of the key techniques for high-power, high-efficiency millimeter-Wave
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …

Power up potential power amplifier technologies for 5G applications

T Qi, S He - IEEE Microwave Magazine, 2019 - ieeexplore.ieee.org
Power amplifiers (PAs) will receive significant attention in the 5G era because of increasing
wireless communication requirements. The development trends of PAs with broader …

Analysis and design of stacked-FET millimeter-wave power amplifiers

HT Dabag, B Hanafi, F Golcuk, A Agah… - IEEE Transactions …, 2013 - ieeexplore.ieee.org
Stacked field-effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are
studied with a focus on design of appropriate complex impedances between the transistors …

A harmonic termination technique for single-and multi-band high-efficiency class-F MMIC power amplifiers

G Nikandish, E Babakrpur… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
This paper presents a harmonic termination technique for single-and multi-band high-
efficiency class-F monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) …

Multi-port active load pulling for mm-wave 5G power amplifiers: Bandwidth, back-off efficiency, and VSWR tolerance

CR Chappidi, T Sharma… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The opening of spectral bands in the millimeter-wave (mm-Wave) spectrum from 26 GHz
and extending up to the E-band poses new challenges to the power amplifier (PA) design for …

A 60-GHz power amplifier with AM–PM distortion cancellation in 40-nm CMOS

S Kulkarni, P Reynaert - IEEE Transactions on Microwave …, 2016 - ieeexplore.ieee.org
This paper presents a complementary push-pull 60-GHz power amplifier (PA) in 40-nm
CMOS. The proposed technique is used to mitigate the amplitude to phase modulation (AM …

14.3 A Push-Pull mm-Wave power amplifier with< 0.8° AM-PM distortion in 40nm CMOS

S Kulkarni, P Reynaert - 2014 IEEE International Solid-State …, 2014 - ieeexplore.ieee.org
Millimeter-Wave standards like IEEE 802.15. 3c and the new 802.11 ad have classifications
of their PHY to support single-carrier mode and more complex OFDM mode (high-speed …