A composition distribution of an Al x Ga1− x As epilayer on a V‐grooved substrate grown by
low‐pressure metalorganic vapor phase epitaxy is described. The aluminum (Al) content of …

High‐spatial‐resolution photoluminescence measurements are reported of Al x Ga1− x As
grown on nonplanar substrates by metalorganic vapor phase epitaxy. The aluminum …

GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100)
substrates patterned with ridges and grooves in the [011̄] direction. Low‐temperature …

The growth and characterization of high-quality AlAs expitaxiallayers on GaAs subtrates by
metalorganic-chemical vapor deposition are described. The epitaxial layers described here …

We present the heterointerfacial properties of GaAs/AlGaAs multiquantum-well structures
grown by atmospheric-pressure metalorganic vapor phase epitaxy on (111) A GaAs …

The growth behavior of AlGaAs/GaAs/InGaAs structures on non-planar (100) GaAs
substrates has been studied. The structures were grown by atmospheric pressure …

Atomic layer epitaxy (ALE) is a relatively new crystal growth technique which allows control
of the growth process at the monolayer level through a self‐limiting, surface‐controlled …

The use of trimethylamine alane (TMAAl) as an alternative to trimethylaluminum (TMAl) for
low-pressure metalorganic vapor-phase epitaxy (MOVPE) of AlGaAs thin films has been …

Abstract The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor
phase epitaxy has been investigated over a range of substrate temperature from 500 C to …

Abstract High quality Al x Ga 1-x P/GaP heteroepitaxial layers were grown by a barrel-type
multiwafer metalorganic vapor phase epitaxy system. Fundamental aspects concerning the …