Efficient modeling of single event transients directly in compact device models

AM Francis, M Turowski, JA Holmes… - 2007 IEEE …, 2007 - ieeexplore.ieee.org
With decreasing feature size, analysis of circuits for radiation strike vulnerability is becoming
very important in a many applications. Classical modeling methods may be not sufficient to …

An overview of the modeling and simulation of the single event transients at the circuit level

M Andjelkovic, A Ilic, Z Stamenkovic… - 2017 IEEE 30th …, 2017 - ieeexplore.ieee.org
The single event transients (SETs) are a common source of malfunction in nano-scale
CMOS integrated circuits. For this reason, evaluation of the SET effects and application of …

Modeling the sensitivity of CMOS circuits to radiation induced single event transients

GI Wirth, MG Vieira, EH Neto, FL Kastensmidt - Microelectronics reliability, 2008 - Elsevier
An accurate and computer efficient analytical model for the evaluation of integrated circuit
sensitivity to radiation induced single event transients is presented. The key idea of the work …

Modeling and analysis method for radiation-induced upsets in modern IC device models

M Francis, D Dimitrov, J Holmes… - 2008 IEEE Aerospace …, 2008 - ieeexplore.ieee.org
As the demand for complex functions to be performed in harsh environments such as space
applications converges with continually diminishing IC feature sizes, the traditional methods …

Multi-scale simulation of radiation effects in electronic devices

RD Schrimpf, KM Warren, DR Ball… - … on Nuclear Science, 2008 - ieeexplore.ieee.org
As integrated circuits become smaller and more complex, it has become increasingly difficult
to simulate their responses to radiation. The distance and time scales of relevance extend …

Modeling and verification of single event transients in deep submicron technologies

MJ Gadlage, RD Schrimpf… - 2004 IEEE …, 2004 - ieeexplore.ieee.org
Digital single event transients (DSETs) are becoming an increasing concern for deep
submicron ICs. As device feature sizes shrink, digital circuits become faster, have smaller …

SEU and SET modeling and mitigation in deep submicron technologies

DG Mavis, PH Eaton - 2007 IEEE International Reliability …, 2007 - ieeexplore.ieee.org
As technology feature sizes decrease, single event upset (SEU), digital single event
transient (DSET), and multiple bit upset (MBU) effects dominate the radiation response of …

Transistor sizing for radiation hardening

Q Zhou, K Mohanram - 2004 IEEE International Reliability …, 2004 - ieeexplore.ieee.org
This paper presents an efficient and accurate numerical analysis technique to simulate
single event upsets (SEUs) in logic circuits. Experimental results that show the method is …

Single event transients in dynamic logic

GI Wirth, I Ribeiro, MG Vieira… - Proceedings of the 19th …, 2006 - dl.acm.org
Radiation effects, like Single Event Transients (SET), are increasingly affecting integrated
circuits as device dimensions are scaling down. With decreasing dimensions and supply …

3D simulation and analysis of the radiation tolerance of voltage scaled digital circuit

R Garg, SP Khatri - 2009 IEEE International Conference on …, 2009 - ieeexplore.ieee.org
In recent times, dynamic supply voltage scaling (DVS) has been extensively employed to
minimize the power and energy of VLSI systems. Also, sub-threshold circuits are becoming …