Recently, we introduced a method based on Bruggeman homogenization formalism in assistance with particle swarm optimization (PSO) to predict the optimized structure of the …
Zinc oxide is a wide and direct-bandgap semiconductor with an energy gap of 3.37 eV at 300 K [1]. High transmission properties in visible range and with an excitation binding …
JH Gu, L Long, Z Lu, ZY Zhong - Journal of Materials Science: Materials in …, 2015 - Springer
Nano transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on glass substrates by the magnetron sputtering technique. The thin films were …
RA Zargar, K Kumar, ZMM Mahmoud, M Shkir… - Physica B: Condensed …, 2022 - Elsevier
Designing of appropriate thin film is important for controlling the absorbance, reflection and transmission of specific wavelength of electromagnetic radiation and which will ultimately …
Tailoring the optical bandgap, E g, of ZnO nanostructured thin films is of great interest to meet increasing demands for diverse practical applications, such as optoelectronics …
We report on optical properties of undoped ZnO and Boron doped ZnO (B-ZnO) thin films prepared by sol-gel dip coating technique. Optical transmittance and reflectance were …
MM Aghgonbad, H Sedghi - Chinese Journal of Physics, 2018 - Elsevier
Zinc oxide (ZnO) thin films were sol–gel spin coated on glass substrates, annealed at various temperatures 300° C, 400° C and 500° C and characterized by spectroscopic …
B Joshi, P Saxena, N Khera - 2016 3rd International …, 2016 - ieeexplore.ieee.org
In this report, we studied the variation of optical properties in the visible and near-IR range for Zinc oxide (ZnO) thin films on two different substrates. Cauchy's and Sellmeier's model …
S Das, SK Das, SR Chakraborty… - Journal of Materials …, 2018 - researchgate.net
ZnO is an important II-VI semiconductor material for devices with possible applications such as piezo-electric transducers, spin functional devices, gas sensors, transparent electronics …