Abstract A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d\cong3 µm) and …

We are reporting on the performance of GaAs/Ga 0.65 Al 0.35 As surface emitting (SE)
lasers with a Ga 0, Al 0.1 As/AlAs multilayer Bragg reflector grown by OMVPE. The …

A metalorganic chemical vapor deposition (MOCVD) was used to grow both double‐
heterostructure wafers and circular buried heterostructures for GaAlAs/GaAs surface emitting …

Abstract Surface emitting GaAs/GaAlAs diodes with a Bragg reflector grown by metalorganic
chemical vapor deposition (MOCVD) were investigated. They have a double heterostructure …

First, it has been made clear that the important parameters of the SE laser are its active layer
thickness d and the mirror reflectivity R. The required values of three parameters such as …

We would like to report on the performance of buried heterostructure (BH) GaAs/Ga 0.65 Al
0.35 As surface emitting (SE) lasers with p-type Ga 0.9 Al 0.1 As/Ga 0.4 Al 0.6 As and SiO …

Room-temperature CW operation of all-MOCVD-grown Al 0.3 Ga 0.7 As/GaAs SQW lasers
on Si substrates with Al 0.5 Ga 0.5 As/Al 0.55 Ga 0.45 P intermediate layers has been …

The authors have realised an InGaAs/GaAs vertical cavity surface emitting laser grown on a
GaAs (311) B substrate by metal-organic chemical-vapour deposition. A carbon auto-doping …

The low threshold current density GaAsSb/GaAs quantum well lasers were realised by metal
organic chemical vapour deposition. A record low threshold current density of 190A/cm^ sup …

A new transverse-mode stabilizing self-aligned structure for (GaAl) As laser diodes by metal
organic chemical vapor deposition (MOCVD) is developed. This structure is characterized by …