A method includes patterning a metal layer to form a plurality of bottom electrode features,
forming a Magnetic Tunnel Junction (MTJ) stack by a line-of-sight deposition process such …

A magnetic tunnel junction (MTJ) device is formed by a process that includes forming a
trench in a substrate and depositing an MTJ structure within the trench. The MTJ structure …

A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess
within a second patterning layer, in which a first patterning layer overhangs the recessed …

Methods for manufacturing a magnetic tunneljunction struc ture include forming a magnetic
tunnel junction (MTJ) layer by sequentially stacking a first ferromagnetic layer, a tunnel …

A method of forming a magnetic tunnel junction device is disclosed that includes forming a
trench in a substrate, the trench including a first sidewall, a second sidewall, a third sidewall …

An improved magnetic tunnel junction device and methods for fabricating the improved
magnetic tunnel junction device are provided. The provided two-etch process reduces …

An apparatus includes a structure that includes a bottom cap layer Surrounding a metal pad.
The apparatus also includes a magnetic tunnel junction (MTJ) device that includes a bottom …

A method of forming a magnetic tunnel junction (MTJ) device includes forming a first MTJ
cap layer on a MTJ structure. The first MTJ cap layer includes a first non-nitrified metal. The …

A method of forming a magnetic tunnel junction device is disclosed that includes forming a
trench in a substrate, the trench including a plurality of sidewalls and a bottom wall. The …

A method for etching a magnetic tunneling junction (MTJ) structure is described. A MTJ stack
is deposited on a bottom electrode wherein the MTJ stack comprises at least a pinned layer …