A 26 GHz power amplifier (PA) targeting millimeter wave 5G mobile systems is presented.
The two stage PA, integrated in a complete transmitter in a 28 nm FD-SOI CMOS process …

This paper presents a high-gain broadband power amplifier for 5G wireless systems, which
provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD …

This paper presents design of a 39-GHz power amplifier for fifth-generation (5G) mobile
communication in millimeter-wave. The power amplifier consists of two differential capacitive …

Continued demand for 5G cellular connectivity in mobile handheld devices, where antenna
real-estate is at a premium, necessitates high output power from individual transmitter …

A frequency reconfigurable dual-band power amplifier (PA) with reconfigurable transmission
line transformers (TLT) is presented, which can be operated at both the n257 (26.5-29.5 …

This paper presents a compact two-stage K/Ka-band power amplifier (PA) implemented in
GlobalFoundries 4SRFSOI CMOS technology for fifth-generation (5G) millimeterwave …

This paper presents a linear power amplifier (PA) implemented in 28-nm bulk CMOS
process for 5G communication systems with wideband operation in order to cover all …

In this paper, we discuss the design and measurement results of a very broadband and
efficient millimeter-wave (mm-Wave) medium-power power amplifier (PA) for potential mm …

This paper presents the design of a 60 GHz power amplifier (PA) in a 22 nm FD-SOI CMOS
technology. To improve the performance at millimeter-wave frequencies by minimizing the …

A 38-GHz high linearity and high efficiency power amplifier is implemented in 65-nm CMOS
process. To improve the back-off efficiency, transistors of the driver stage are biased in deep …