Lattice-matched InGaAs on (100) InP was grown by molecular beam epitaxy with arsenic
dimers (As2) at a growth temperature (Tg) range of 250–470° C. Measurements of double …

Indium Gallium Arsenide (In0. 53Ga0. 47As) is a suitable compound semiconductor for
photodetector applications in the Short Wavelength Infrared (SWIR) band with its~ 1.7 µm …

InAs epilayers with thicknesses of 400, 500, 750, and 1500nm were grown on GaAs by
molecular beam epitaxy and their properties were investigated by reflection high-energy …

The growth of In x Gaj 1− x As (x= 0.13–0.25) on GaAs by chemical beam epitaxy (CBE) and
laser-modified CBE using trimethylindium (TMIn), triethylgallium (TEGa), and tris …

We report the effect of two sources of arsenic on the surface morphology, optical and
electrical properties of InGaAs/InP epilayers grown by metalorganic vapor-phase epitaxy at …

InP-based high indium content In 0.83 Ga 0.17 As photodetector structures with lattice
mismatch up to 2.1% have been grown by gas source molecular beam epitaxy system. The …

Abstract InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a
migration-enhanced molecular beam epitaxy method. Temperature-dependent …

1-μm InGaAsP epitaxial layers lattice-matched to InP substrates have been grown by liquid-
phase epitaxy. From photoluminescence (PL) measurements at various temperatures and …

InGaAs layers on undoped GaAs (001) substrates were grown by atmospheric pressure
metalorganic vapour phase epitaxy (AP-MOVPE). In order to obtain films with different …

Photoluminescence and photoconductivity measurements were used to study the influence
of Ho doping on the optical properties of InGaAsP layers grown by liquid phase epitaxy …