A method of forming a magnetic tunnel junction device is disclosed that includes forming a
trench in a substrate, the trench including a first sidewall, a second sidewall, a third sidewall …

A method of forming a magnetic tunnel junction device is disclosed that includes forming a
trench in a substrate, the trench including a plurality of sidewalls and a bottom wall. The …

(57) ABSTRACT A method of manufacturing a magnetic tunnel junction device is disclosed
that includes forming a trench in a Sub strate, depositing a conductive terminal within the …

A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess
within a second patterning layer, in which a first patterning layer overhangs the recessed …

An improved magnetic tunnel junction device and methods for fabricating the improved
magnetic tunnel junction device are provided. The provided two-etch process reduces …

A method of forming a magnetic tunnel junction (MTJ) device includes forming a spacer on
an exposed side portion of the MTJ device. The method further includes forming an etch …

A method of manufacturing a double magnetic tunnel junction device is provided. The
method includes forming a first magnetic tunnel junction stack. The first magnetic tunnel …

(57) ABSTRACT A magnetic tunnel junction (MTJ) device and fabrication method is
disclosed. In a particular embodiment, a method is disclosed that includes forming a …

A method includes patterning a metal layer to form a plurality of bottom electrode features,
forming a Magnetic Tunnel Junction (MTJ) stack by a line-of-sight deposition process such …

A method of forming a magnetic tunnel junction (MTJ) device includes forming a first MTJ
cap layer on a MTJ structure. The first MTJ cap layer includes a first non-nitrified metal. The …