Light-emitting diodes (LEDs) based on pn homo-and heterostructures with InAsSb (P) and
InGaAs active layers have been designed and studied. An emission power of 0.2 (λ= 4.3 µm) …

Light emitting diodes for the spectral range λ= 3.3-4.3 μm fabricated from InGaAs and
InAsSbP solid solutions: Electroluminescence in the temperature range of 20-180 C (part 2< …

Light emitting diodes (LEDs) with λ max= 3.4 and 4.3 µm (t= 20° C) were studied at elevated
temperatures. It is demonstrated that LEDs operating in the temperature range t= 20–180° C …

Abstract Variable-temperature (4.2-300 K) electroluminescence (EL) studies were performed
on two asymmetrical InAs/InAsSb/InAsSbP LED heterostructures emitting at 5.02 and 5.10 …

Mid-infrared light-emitting diodes (LEDs) operating in the 3.3–4.5 μm wavelength range at
room temperature are produced on the basis of InAsSbP/InAsSb heterostructures. The …

Light emitting diodes (LEDs) are fabricated on the basis of MOVPE-grown N-InAsSbP/n-
InAsSb/P-InAsSbP heterostructures. LEDs operating in the 3.45–4.45 µm wavelength range …

The influence of a gadolinium impurity on the electrical and luminescence characteristics of
epitaxial structures made from narrow-gap n-InGaAsSb solid solutions grown by liquid …

Abstract Asymmetric n-InAs/InAs (1–y) Sb y/p-InAsSbP heterostructures with a narrow-gap
active layer and a composition range y= 0.09–0.16 were grown by vapor phase epitaxy from …

Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II
heterostructures with deep quantum wells at the heterointerface are studied. The …

Abstract Subject of Study. We consider spectral characteristics of mid-infrared light-emitting
diodes with heterostructures based on InAs (Sb, P) emitting at T= 300 K in the wavelength …