An Improvement of Analytical I–V Model for Surrounding-Gate MOSFETs
A Alkoash, RM Šašć, SM Ostojić… - … of Computational and …, 2011 - ingentaconnect.com
The paper presents a realistic and necessary improvement of the existing current–voltage
model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of …
model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of …
A unified carrier-transport model for the nanoscale surrounding-gate MOSFET comprising quantum–mechanical effects
A unified carrier-transport model for a nanoscale surrounding-gate metal-oxide-
semiconductor field-effect transistor (SG MOSFET) is developed. The model is based on …
semiconductor field-effect transistor (SG MOSFET) is developed. The model is based on …
Analytical Parametric Modeling of Nanoscale Surrounding Gate MOSFET Based on the Poisson's Equation
In this paper lightly doped surrounding gate (SGT) MOSFET, which is based on the exact
solution of the Poisson's equation, and the current continuity equation without the charge …
solution of the Poisson's equation, and the current continuity equation without the charge …
A simple model for the nanoscale surrounding-gate MOSFET
A simple model for the nanoscale surrounding-gate MOSFET Page 1 PROC. 24th
INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2004). VOL 1, Nls …
INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2004). VOL 1, Nls …
An accurate model of inversion carrier effective mobility considering scattering mechanisms for nanoscale mos devices
EJZM Sathi, QDM Khosru - International Conference on …, 2010 - ieeexplore.ieee.org
Electrical characteristics of metal oxide-semiconductor field effect transistor (MOSFET) are
numerically studied here. Carriers scattering in the inversion channel of MOSFET dominates …
numerically studied here. Carriers scattering in the inversion channel of MOSFET dominates …
A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs
In this paper, we have presented a surface potential based drain current and threshold
voltage model for surrounding gate MOSFETs that is valid for all doping concentrations. The …
voltage model for surrounding gate MOSFETs that is valid for all doping concentrations. The …
An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs
W Bian, J He, Y Tao, M Fang… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
An analytic potential-based model for the undoped surrounding-gate MOSFETs is derived in
the paper. The model is obtained from rigorously solving Poisson equation together with the …
the paper. The model is obtained from rigorously solving Poisson equation together with the …
Modeling of parameters for nano‐scale surrounding‐gate MOSFET considering quantum mechanical effect
In this paper, an analytical surface potential and threshold voltage model for surrounding
gate metal‐oxide semiconductor field‐effect transistor are proposed considering the …
gate metal‐oxide semiconductor field‐effect transistor are proposed considering the …
A carrier-based analytic drain current model incorporating velocity saturation for undoped surrounding-gate MOSFETs
A carrier-based analytic drain current model including the velocity saturation effect for the
undoped surrounding-gate (SRG) MOSFETs is developed in this paper. Based on the …
undoped surrounding-gate (SRG) MOSFETs is developed in this paper. Based on the …
A physics-based short-channel current–voltage model for buried-channel MOSFETs
CG Chyau, SL Jang - Solid-State Electronics, 1999 - Elsevier
In this paper, we present a physics-based and analytical I–V model for submicron buried-
channel MOSFETs. The model is based on the quasi 2D Poisson equation and includes the …
channel MOSFETs. The model is based on the quasi 2D Poisson equation and includes the …