Photoluminescence (PL) polarization of a spin ensemble was examined over a wide
excitation wavelength range from 520 nm to 700 nm and a temperature range from 3.5 K to …

GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection
of spin polarized electrons in Al 0.22 Ga 0.78 As material over the excitation energy range of …

The impact of inter-valley scattering in modifying the density of optically injected spin
polarized electrons in Al x Ga 1− x As/GaAs heterostructure is investigated. Polarization …

We conducted systematic measurements on the carrier lifetime (τ c), spin relaxation time (τ
s), and circular polarization of photoluminescence (P circ) in (100) GaAs/AlGaAs multiple …

The exciton spin dynamics are investigated both experimentally and theoretically in two-
monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band …

The impact of the growth orientation on spin dynamics in GaAs/AlGaAs quantum wells
(QWs) is explored through magnetophotoluminescence measurements. Samples grown on …

This work aims to investigate the effects of magnetic field strength and direction on the
electronic properties and optical response of GaAs/AlGaAs-based heterostructures. An …

The effect of external electric bias on the kinetics of circularly polarized photoluminescence
(PL) of the GaAs quantum wells (QWs) is studied experimentally. It is found that a negative …

The dynamics of the optical orientated excitonic spins in semiconductor quantum wells has
been investigated using opposite circular polarizations of the photoluminescence (PL) …

The flipping of optically generated spins in GaAs was investigated using pump–probe
photoluminescence polarization measurements in the presence of an external magnetic …