In this paper we report the performance and study of GaAs AlGaAs (SCH) laser. The
structures were grown by a new variant of the LPE‐technique with temperatures regimes …

The possibilities of the low‐temperature (LT)‐LPE technique in the performance of visible
AlGaAs laser diodes are studied. Low current density visible lasers λ˜ 746 nm has been …

In this paper we describe the growth and characteristics of AlGaAs/GaAs laser structures
with 2, 3, and 4 quantum wells in their active region fabricated by Low‐Temperature Liquid …

Résumé L'épitaxie par jets moléculaires à forte température du substrat (TS≈ 600 C) est
désormais de plus en plus utilisée pour obtenir des couchesde GaAs et Ga 1-x Al x As avec …

The effect of a growth interruption at the interfaces of the AlGaAs/InGaAs/GaAs quantum well
(QW) in the active region of metalorganic vapour phase epitaxy (MOVPE) grown 980 nm …

The growth behavior of AlGaAs/GaAs/InGaAs structures on non-planar (100) GaAs
substrates has been studied. The structures were grown by atmospheric pressure …

In a recent publication we gave preliminary results on the lasing characteristics of a GRIN-
SCH GaAs/GaAlAs laser grown by OM-VPE. The parameters of this single quantum well …

We report on the low-temperature Molecular Beam Epitaxy (MBE) growth of single quantum
well (SQW) GaAs/AlGaAs lasers under a low flux ratio. Lasing action was observed at a …

The carrier concentration of LPE grown Mg-doped AlGaAs is determined as a function of
atom fraction Mg in the growth solution. Double heterostructure lasers which use Mg as the p …

Double heterostructures of AlGaAasb quaternary alloys on (100)-GaSb substrates were
grown by LPE technique and were studied as laser devices. The active layer thickness was …