This paper proposes a cantilever-based nanoelectromechanical (NEM) nonvolatile memory
(NVM) with a novel write scheme for reliable memory operation at very high-operating …

This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture
employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes …

Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM,
or magnetic RAM, have limited reliability at high temperature (HT, T>; 200° C). On the …

This work demonstrates a novel anchor-free nano-electromechanical (NEMS) based non-
volatile memory cell, suitable for high temperature (T≤ 300 C) and radiation prone harsh …

A novel nonvolatile nanoelectromechanical (NEM) memory (nRAM) is introduced. Differently
than the previously proposed NEM memories, the nRAM achieves the nonvolatility via …

By using complementary-metal-oxide-semiconductor processes, a silicon based bi-stable
nanoelectromechanical non-volatile memory is fabricated and characterized. The main …

A new electro-mechanical non-volatile memory (NVM) cell design is proposed and
demonstrated for the first time. The fabricated cells operate with relatively low program/erase …

The static switching properties and readout characteristics of proposed high-speed and
nonvolatile nanoelectromechanical (NEM) memory devices are investigated. By conducting …

Nonvolatile memory (NVM) devices based on storage layers, pn junctions and transistors,
such as FLASH, suffer from poor retention at high temperature, high voltage writing, and …

This chapter summarizes the recent progress in micro‐and nano‐electro‐mechanical (NEM)
devices for low‐power memory applications. Some of the unique figures of merit of M/NEM …