Several scanning probe microscopy (SPM) modes exist for the electrical characterization of
semiconductor materials and devices with nm-scale resolution. The most important electrical …

The spatial resolution, sensitivity, and accuracy required for electrical characterization of
device structures in the semiconductor industry suggest that scanning probe microscopy …

A scanning capacitance microscope (SCM) combines an atomic force microscope (AFM)
with a 1-GHz tuned inductance-capacitance-resistance (LCR) circuit to measure the …

This paper gives an overview of established methods and new developments in the field of
Scanning Probe Microscopy (SPM) of functional films and semiconductor devices. It focuses …

We have studied cross-sectioned n-and p-metal-oxide-semiconductor field effect transistors
with gate lengths approaching 60 nm using a scanning capacitance microscope (SCM). In a …

Scanning capacitance microscopy SCM enables the imaging of the two-dimensional carrier
profiles of small transistors. Initial imaging utilized metal-coated probe tips but the limited …

An overview of the existing two-dimensional carrier profiling tools using scanning probe
microscopy includes several scanning tunneling microscopy modes, scanning capacitance …

Determining the cross-sectional doping profile of very small metal–oxide–semiconductor
field effect transistors and specifically the direct measurement of their channel length is …

Two-dimensional (2D) dopant profiling techniques have received increasing attention as
critical dimensions of metal–oxide–semiconductor field-effect transistors (MOSFETs) …

Scanning microwave impedance microscopy was used to analyze a CMOS image sensor
sample to reveal details of the dopant profiling in planar and cross-sectional samples …