Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

RG Waters, SL Yellen, NF Ruggieri… - IEEE photonics …, 1990 - ui.adsabs.harvard.edu
Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs
quantum well lasers. Dark-line defects have high growth velocity along 100-line in GaAs …
被引用次数：134 相关文章 所有 12 个版本

Dark-line-resistant diode laser at 0.8 microns comprising InAlGaAs strained quantum well

RG Waters, RJ Dalby, JA Baumann… - IEEE Photonics …, 1991 - ui.adsabs.harvard.edu
Quantum-well lasers emitting at 0.8 microns and resistant to 100 dark-line propagation are
demonstrated. The devices, which replace AlGaAs by InAlGaAs in the quantum-well active …
被引用次数：57 相关文章 所有 5 个版本

Current density dependence for dark-line defect growth velocity in strained InGaAs/AlGaAs quantum well laser diodes

K Fukagai, S Ishikawa, KE Yuasa - Japanese journal of applied …, 1991 - iopscience.iop.org
Dark-line defects (DLDs) of threading dislocation origin in strained InGaAs/AlGaAs quantum
well laser diodes were observed by the electron-beam induced current technique. Current …
被引用次数：29 相关文章 所有 8 个版本

Reliable operation of strain‐compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers

T Fukunaga, M Wada, T Hayakawa - Applied physics letters, 1996 - pubs.aip.org
We report the reliable operation of strain-compensated InGaAs/InGaAsP/GaAs 1.06 μm
separate confinement heterostructure single-quantum-well laser diodes with tensile-strained …
被引用次数：63 相关文章 所有 6 个版本

Influences of dark line defects on characteristics of AlGaAs/GaAs quantum well lasers grown on Si substrates

Y Hasegawa, T Egawa, T Jimbo… - Japanese journal of …, 1995 - iopscience.iop.org
We report the influences of dark line defects (DLD's) on characteristics of AlGaAs/GaAs
quantum well lasers grown on Si substrates under continuous-wave aging operation …
被引用次数：27 相关文章 所有 8 个版本

Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering

WX Zou, JL Merz, RJ Fu, CS Hong - Electronics Letters, 1991 - IET
Stripe-geometry strained InGaAs–GaAs quantum well lasers were fabricated by impurity
induced disordering. Threshold currents as low as 2.2 mA at room temperature continuous …
被引用次数：30 相关文章 所有 6 个版本

Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing

N Yamada, G Roos, JS Harris Jr - Applied physics letters, 1991 - pubs.aip.org
A significant reduction in lasing threshold is achieved by rapid thermal annealing (RTA) for
strained InGaAs/GaAs single quantum well lasers grown by molecular beam epitaxy under …
被引用次数：55 相关文章 所有 5 个版本

Anomalous dependence of threshold current on stripe width in gain‐guided strained‐layer InGaAs/GaAs quantum well lasers

C Shieh, J Mantz, H Lee, D Ackley… - Applied physics …, 1989 - pubs.aip.org
An anomalous dependence of the threshold current on the stripe width is observed for gain‐
guided strained‐layer InGaAs/GaAs quantum well lasers. The threshold current increases …
被引用次数：46 相关文章 所有 7 个版本

High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size

MA Emanuel, NW Carlson… - IEEE Photonics …, 1996 - ieeexplore.ieee.org
Lasers diodes having a large transverse spot size have been fabricated from a modified
graded index separate confinement heterostructure with an active region consisting of two …
被引用次数：31 相关文章 所有 4 个版本
[PDF] researchgate.net

Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers

DP Bour, RU Martinelli, DB Gilbert, L Elbaum… - Applied physics …, 1989 - pubs.aip.org
The performance of a series of In x Ga1− x As/AlGaAs (x= 0.20 and 0.25) strained single
quantum well (SSQW) lasers with lasing wavelengths in the range 930≤ λ≤ 1000 nm is …
被引用次数：52 相关文章 所有 9 个版本