A hard mask stack for etching a magnetic tunneling junction (MTJ) structure is described. An
electrode layer is deposited on a stack of MTJ layers on a bottom electrode. A photoresist …

A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of
MTJ layers is provided on a bottom electrode. A top electrode is provided on the MTJ stack …

A magnetic tunnel junction (MTJ) device is formed by a process that includes forming a
trench in a substrate and depositing an MTJ structure within the trench. The MTJ structure …

A magnetic tunnel junction (MTJ) structure is provided over a device wherein the MTJ
comprises a tunnel barrier layer between a free layer and a pinned layer; and a top and …

A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus
includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for …

(57) ABSTRACT A method of fabricating a magnetic tunnel junction (MTJ) device is
provided. A patterned hard mask is oxidized to form a Surface oxide thereon. An MTJ Stack …

A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess
within a second patterning layer, in which a first patterning layer overhangs the recessed …

MTJ elements may be used to create a magnetic random access memory (MRAM) or a spin
torque transfer MRAM (STT-MRAM). An MTJ element typically includes a pinned layer, a …

An integrated circuit device includes a substrate and a magnetic tunneling junction (MTJ).
The MTJ includes at least a pinned layer, a barrier layer, and a free layer. The MTJ is formed …

In a particular illustrative embodiment, a method of forming a magnetic tunnel junction (MTJ)
device is disclosed that includes forming a trench in a substrate. The method further includes …