The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive
review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and …

The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …

The OMVPE growth technique has only recently been established to yield device quality III–
V compounds and alloys. The alloy receiving the most attention has been Al x Ga 1− x As …

The performance of high-speed semiconductor devices—the genius driving digital
computers, advanced electronic systems for digital signal processing, telecommunication …

Abstract Lattice matched Ga 0.5 In 0.5 P/GaAs single interfaces, single quantum wells (QW)
and finally quantum wires on mesa-like selective GaAs were grown by LP-MOVPE. The …

Low-pressure MOCVD has been used to grow layers of InP, InGaAs, GaInAsP and quantum
well material on planar substrates patterned with silica masks. The thicknesses and, where …

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are
predominantly made using III–V semiconductor compounds such as GaAs, InP, GaN, and …

Abstract High-purity GaAs and GaAlAs epilayers have only been grown by MOVPE very
recently. They are successfully used for the layers of microwave MESFETs and …

The growth of the promising semiconductor alloy GaInAs by OMVPE has been studied using
organometallic vapor phase epitaxy (OMVPE). The growth process and materials properties …