The time-stability of the electrical characteristics of chalcogenide materials is one of the most
important issues for their use in nonvolatile solid state memory applications. In particular the …

The structural relaxation (SR) process in an amorphous chalcogenide material (Ge 2 Sb 2
Te 5) is studied by electrical measurements on phase-change memory devices. SR induces …

This work investigates the atomic structural relaxation accounting for the resistance drift of
the amorphous phase of the Ge 2 Sb 2 Te 5 (α-GST) chalcogenide alloy. A joint electrical …

A gradual uncontrollable increase in the resistivity of the amorphous phase of phase-change
alloys, such as Ge 2 Sb 2 Te 5, known as drift, is a serious technological issue for …

Storage concepts employing the resistance of phase-change memory (PRAM) have matured
in recent years. Attempts to model the conduction in the amorphous state of phase-change …

The amorphous-to-crystal transition has been studied through in situ resistance
measurements in Ge2Sb2Te5 thin films doped by ion implantation with nitrogen or oxygen …

Switching and memory effects in as-deposited amorphous Ge2Sb2Te5 films with a
considerable concentration of crystalline nuclei have been investigated. Variation of the …

Time-dependent drift of resistance in chalcogenide glasses leads to instabilities in phase-
change random access memory (PCRAM). To reveal the origin of the resistance drift …

Abstract'Phase-change'memory materials, such as the canonical composition Ge 2 Sb 2 Te
5, are being actively researched for non-volatile resistive random-access memory …

Percolation effects are studied in phase change materials used for optical and electrical
nonvolatile memory applications. Simultaneous measurements of the electrical resistivity …