Since its invention in 1962, the semiconductor laser has come a long way. Advances in
material purity and epitaxial growth techniques have led to a variety of semiconductor lasers …

560 Mbit/s transmission experiment using 1.3 ?m InGaAsP/InP LED × Close The Infona portal
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By using a distributed feedback buried heterostructure InGaAsP/InP laser diode emitting at
1.53 μm, 21.7 km single-mode fibre transmission at 280 Mbit/s was successfully carried out …

Optical transmission experiments performed at 2.24 Gb/s using standard single-mode fiber
with dispersion zero at 1.3 mu m are discussed. In the optical transmitter, a 1.5-mu m …

The transmission experiments demonstrate that operation of 2.488 Gbit/s optical
transmission systems over more than 150 km standard SMF is not dispersion limited using …

The high sensitivity of a Ge APD optical receiver, and dispersion-free fibres at a minimum
loss wavelength of 1.55 μm, made it possible to achieve 51.5 km optical signal transmission …

InGaAsP laser-diode-signal amplification at 1.24 micron is obtained by using simulated
Raman scattering in single-mode optical fibers with a low pump power at 1.18 micron …

Singlemode fibre (SMF) transmission using a 1.2 µm band GaInAs/GaAs vertical cavity
surface emitting laser (VCSEL) is demonstrated. It was observed that the short optical pulse …

Recently there have been dramatic increases in the bandwidths of lasers, detectors and
optical transmission systems. The bandwidth of semiconductor lasers has been doubled by …

Lateral current injection membrane buried heterostructure lasers integrated on 200-nm-thick
Si waveguide Page 1 W3F.4.pdf OFC 2018 © OSA 2018 Lateral current injection membrane …