A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (100)
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …

Porous GaAs layers were formed by electrochemical etching of p-type GaAs (100)
substrates in HF solution. A surface characterization has been performed on p-type GaAs …

GaAs nanocrystallites are elaborated by electrochemical etching of n+ type GaAs substrates.
Photoluminescence (PL) and atomic force microscope (AFM) images analysis are used to …

The optical and structural properties of a porous GaAs have been studied. The samples a of
porous GaAs were fabricated by an electrochemical method on n‐and p‐type GaAs (100) …

In this paper, we present the results of structural and photoluminescence (PL) studies on
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …

The GaAs granular films have been prepared by electrochemical anodic etching of n-GaAs
in HCl electrolyte at different etching temperatures. The microstructure and optical properties …

The electrochemical etching of n+‐type GaAs in a hydrofluoric acid (HF) solution results in
the formation of a porous layer. The current–potential characteristic I (V) of the n+‐type GaAs …

Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …

The optical properties of porous GaAs layers obtained by electrochemical etching of single-
crystal n-and p-GaAs (100) wafers are studied. It is shown that the shape of the nanocrystals …

A typical porous structure with pores diameters ranging from 10 to 50nm has been obtained
by electrochemical etching of (100) heavily doped p-type GaAs substrate in HF solution …