The optoelectronic properties of short-period InAs/(GaIn) Sb superlattices (SLs) grown by
molecular beam epitaxy on GaSb substrates are discussed. We report on the optimization of …

A substantial effort has been devoted in recent years to the development of large focal plane
arrays (FPA) of photovoltaic detectors sensitive to infrared (IR) radiation in the 8–12 μm …

Spectrally resolved measurements of the responsivity of infrared photodiodes based on
InAs/(GaIn) Sb superlattices (SL) were performed in applied magnetic fields. For the field …

The superlattice (SL) design parameters of a 50 period InAs/GaSb SL structure with InSb-
like interfaces (IFs) were systematically varied around the 26Å InAs/27Å GaSb design in …

The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn) Sb
superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off …

Type-II InAs/GaSb superlattices (SLs) made of 10 InAs monolayers (MLs) and 10 GaSb MLs,
designed to have a cut-off wavelength of 5.4 μm, have been grown on GaSb substrates by …

We report on the demonstration of high performance pin photodiodes based on type-II
InAs/GaSb superlattices operating in the very long wavelength infrared (VLWIR) range at 80 …

We studied the Ga-free InAs/InAsSb type-II superlattice (T2SL) period, thickness and
antimony composition, in order to define an optimized structure suitable for detection of the …

Electric and optical properties of IR photodiodes based on InAs/(GaIn) Sb superlattices were
investigations. Mesa diodes were fabricated with cut-off wavelengths ranging from 7.5 to 12 …

Type-II superlattices (SLs) can be designed for semiconductor band gaps as large as 400
meV down to semimetallic. This flexibility in design makes them an excellent candidate for …