[引用][C] Stable optical picosecond pulses from actively mode-locked twin-section diode lasers

J Werner, H Melchior, G Guekos - Electronics Letters, 1988 - IET
STABLE OPTICAL PICOSECOND PULSES FROM ACTIVELY MODE-LOCKED TWIN-SECTION
DIODE LASERS Page 1 References 1 SAKAKIBARA, Y., H1GUCHI. H., OOMURA, E …

Passively Mode-Locked High-Power (210 mW) Semiconductor Lasers at 1.55-m Wavelength

FR Ahmad, F Rana - IEEE Photonics Technology Letters, 2008 - ieeexplore.ieee.org
We report on the generation of stable passively mode-locked pulses at 1.55-mum
wavelength from high-power electrically pumped, large transverse mode semiconductor …

Generation of subpicosecond high-power optical pulses from a hybrid mode-locked semiconductor laser

PJ Delfyett, CH Lee, LT Florez, NG Stoffel, TJ Gmitter… - Optics letters, 1990 - opg.optica.org
Ultrashort optical pulses 0.46 psec in duration with over 70 W of peak power are generated
from an all-semiconductor laser-diode system. These results represent to our knowledge …

Generation of High Power Femtosecond Optical Pulses from a Semiconductor Diode Laser System

PJ Delfyett, L Florez, N Stoffel, T Gmitter… - Picosecond …, 1991 - opg.optica.org
Compact and efficient sources of high repetition rate, high peak power ultrashort optical
pulses are needed to replace the standard ultrashort optical pulse generation schemes due …

Picosecond pulse generation and pulse train stability of a monolithic passively mode-locked semiconductor quantum-well laser at 1070 nm

C Weber, A Klehr, A Knigge… - IEEE Journal of Quantum …, 2018 - ieeexplore.ieee.org
We experimentally study the pulse generation and the pulse train timing and amplitude
stability of a monolithic passively mode-locked multisection quantum-well semiconductor …

Bandwidth-limited picosecond pulses from an actively mode-locked GaAlAs diode laser

D Bradley, M Holbrook, W Sleat - IEEE Journal of Quantum …, 1981 - ieeexplore.ieee.org
Bandwidth-limited pulses (16 ps duration, Δ t Δ ν= 0.36) are obtained from an actively mode-
locked GaAlAs CW diode laser. Replacing the 380 MHz sinewave modulation by …

Bandwidth‐limited picosecond pulse generation in an actively mode‐locked GaAlAs diode laser

MB Holbrook, WE Sleat, DJ Bradley - Applied Physics Letters, 1980 - pubs.aip.org
Bandwidth-limited pulses of 16 ps duration, 1 W peak power, and a time-bandwidth product
value of Ll vLl t= 0.36 are obtained from an actively mode-locked, angled-stripe GaAIAs cw …

High-performance 10 GHz all-active monolithic modelocked semiconductor lasers

K Yvind, D Larsson, LJ Christiansen, J Mørk… - Electronics …, 2004 - search.proquest.com
High-performance 10 GHz all-active monolithic modelocked semiconductor lasers Page 1
High-performance 10 GHz all-active monolithic modelocked semiconductor lasers K. Yvind …

Multiple colliding pulse mode‐locked operation of a semiconductor laser

JF Martins‐Filho, CN Ironside - Applied physics letters, 1994 - pubs.aip.org
Multiple colliding pulse mode-locked operation where 3 or 4 ultrashort pulses are present
simultaneously within a semiconductor laser is described. Frequency and time domain …

Direct observation of picosecond light pulses from a pulse‐current pumped semiconductor laser

Y Tsuchiya, M Miwa, M Koishi - Journal of Applied Physics, 1982 - pubs.aip.org
The generation of ultrashort optical pulses from semiconductor diode lasers is of
considerable interest to the scientific and industrial communities. Activel-4 and passives. 6 …