BACKGROUND Typically, in a semiconductor device, various electronic components (eg,
transistors, diodes, resistors, capacitors, and the like) are formed in device dies on a wafer …

Representative techniques and devices, including process steps may be employed to
mitigate undesired dishing in conductive interconnect structures and erosion of dielectric …

The present invention is to provide a package-free bond ing pad structure capable of directly
coupling to a carrier or a base Substrate without having to go through a third conductive …

Bonding pads for integrated circuits include first and Second spaced apart conductive
layers, a third continuous conduc tive layer between the first and Second Spaced apart and …

A composite bump structure and methods of forming the composite bump structure. The
composite bump structure comprises a polymer body of relatively low Young's Modulus …

(57) ABSTRACT A bonded device structure including a first Substrate having a first set of
metallic bonding pads, preferably connected to a device or circuit, and having a first non …

Multilayer bonding pads for integrated circuits include first and second spaced apart
conductive patterns and a dielectric layer therebetween. A closed conductive pattern is …

A bonded device structure including a first substrate having a first set of metallic bonding
pads, preferably connected to a device or circuit, and having a first non-metallic region …

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-
bonding techniques join layers of dies of various physical sizes, form factors, and foundry …

(57) ABSTRACT A bonded device structure including a first Substrate having a first set of
metallic bonding pads, preferably connected to a device or circuit, and having a first non …