Gallium arsenide antimonide: The possibility of lattice‐matched LPE growth on InP substrates
CG Fonstad, M Quillec, S Garone - Journal of Applied Physics, 1978 - pubs.aip.org
The possibility of using liquid phase epitaxy (LPE) to grow GaAs x Sb1− x on InP substrates
has been investigated. Theoretical phase‐diagram calculations for the GaAsSb system …
has been investigated. Theoretical phase‐diagram calculations for the GaAsSb system …
Growth and continuous compositional grading of GaAs1−x−zSbxPz by liquid phase epitaxy
RE Nahory, MA Pollack, JC DeWinter - Journal of Applied Physics, 1977 - pubs.aip.org
The need for laser sources and detectors in optical communications has stimulated
considerable recent research into III-V ternary and quaternary mixed crystals. In order to …
considerable recent research into III-V ternary and quaternary mixed crystals. In order to …
Low‐temperature phase diagram of the Ga‐As‐Sb system and liquid‐phase‐epitaxial growth of lattice‐matched GaAsSb on (100) InAs substrates
H Mani, A Joullie, F Karouta, C Schiller - Journal of applied physics, 1986 - pubs.aip.org
The liquidus and solidus in the Ga-rich comer ofthe Ga-As-Sb system were determined by
experiments using liquids of constant antimony concentration rsb= 0.0615. Evidence was …
experiments using liquids of constant antimony concentration rsb= 0.0615. Evidence was …
Growth and characterization of lattice‐matched epitaxial films of GaxIn1− xAs/InP by liquid‐phase epitaxy
TP Pearsall, RW Hopson - Journal of Applied Physics, 1977 - pubs.aip.org
We determined the conditions for successful lattice-matched growth by liquid-phase epitaxy
near T= 600 C of Ga, Inl., As on< Ill B) InP substrates. We have used the results of the growth …
near T= 600 C of Ga, Inl., As on< Ill B) InP substrates. We have used the results of the growth …
Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy
GA Antypas, J Edgecumbe - Journal of Crystal Growth, 1976 - Elsevier
InGaAsP layers grown by liquid-phase epitaxy on InP substrates can form lattice-matched
heterojunctions sensitive to light in the wavelength range from 0.9 to 1.7 μm. A simple model …
heterojunctions sensitive to light in the wavelength range from 0.9 to 1.7 μm. A simple model …
Growth and characterization of lattice-matched epitaxial films of GaxIn1−xAs/InP by liquid-phase epitaxy
TP Pearsall, RW Hopson - Journal of Electronic Materials, 1978 - Springer
We determined the conditions for successful lattice-matched growth by liquid-phase epitaxy
near T= 620‡ C of Ga X In 1− X As on [111B] InP substrates. We have used the results of the …
near T= 620‡ C of Ga X In 1− X As on [111B] InP substrates. We have used the results of the …
Liquid‐Phase Epitaxy of In× GA 1−× As
GA Antypas - Journal of The Electrochemical Society, 1970 - iopscience.iop.org
InxGa1-~ As layers grown by liquid-phase epitaxy were obtained in the range of 0.0< x<
0.23, when grown on the (lll Ga) plane of GaAs. Attempts to grow alloys on the (if0),(ill …
0.23, when grown on the (lll Ga) plane of GaAs. Attempts to grow alloys on the (if0),(ill …
Low‐temperature liquid phase epitaxial growth of an (In, Ga, Al) Sb quaternary alloy
H Ohshima, A Tanaka, T Sukegawa - Applied physics letters, 1985 - pubs.aip.org
A growth procedure was proposed to prepare the saturated growth solution at low
temperature. Using the procedure, an (In, Ga, Al) Sb aHoy was grown on GaSb at 450· C …
temperature. Using the procedure, an (In, Ga, Al) Sb aHoy was grown on GaSb at 450· C …
The liquid-phase epitaxial growth of InGaAsP
K Nakajima - Semiconductors and semimetals, 1985 - Elsevier
Publisher Summary This chapter discusses the liquid-phase epitaxy (LPE) growth of
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …
Substrate Orientation Dependence of Growth Rate of InGaAs/InP Grown by Liquid Phase Epitaxy
K Nakajima, K Akita - Journal of The Electrochemical Society, 1982 - iopscience.iop.org
The substrate orientation dependence of the growth rate has been studied for the LPE
growth of In~ _~ Ga~ As on InP under various growth conditions. The growth rate on the …
growth of In~ _~ Ga~ As on InP under various growth conditions. The growth rate on the …