The most recent advances in III–V semiconductors, from wide band gap AlN to the new
narrow band gap InTlSb material, are examined. Specifically, results for AlN, GaN, and their …

During the past decade, group III-Nitride wide bandgap semiconductors have become the
focus of extremely intensive reearch because of their exceptional physical properties and …

The most widely used material for long-wavelength infrared (L WIR) focal-plane arrays (FPA)
is the alloy HgCdTe (MCT). However, MCT is a weakly bonded II-VI compound with material …

The III-N wide-bandgap alloys in the AlInGaN system have many important and unique
electrical and optical properties which have been exploited to develop deep-ultraviolet …

This book contains full account of the advances made in the dilute nitrides, providing an
excellent starting point for workers entering the field. It gives the reader easier access and …

Gallium nitride and its alloys with InN and AlN have recently emerged as important
semiconductor materials with applications to yellow, green, blue and ultraviolet portions of …

Large-Bandgap Semiconductors Page 1 Turkish Journal of Physics Volume 23 Number 4
Article 7 1-1-1999 Large-Bandgap Semiconductors BK RIDLEY Follow this and additional …

In1− x Tl x Sb is proposed as promising infrared material. A number of optical and structural
properties are studied within local density‐functional theory. The alloy at x= 0.09 is …

III-V compound semiconductors (SC) have played a crucial role in the development of
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …

The InNxAs1–x alloy is a very promising, although so far almost completely unexplored,
novel material for mid-IR emitters and detectors. InNAs/GaAs multiple quantum wells were …