We demonstrate room temperature continuous-wave (CW) operation of Al 0.3 Ga 0.7
As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical …

We demonstrate the first room‐temperature low‐threshold continuous‐wave (cw) operation
of Al0. 3Ga0. 7As/GaAs single quantum well (SQW) heterostructure lasers grown by …

Room-temperature CW operation of all-MOCVD-grown Al 0.3 Ga 0.7 As/GaAs SQW lasers
on Si substrates with Al 0.5 Ga 0.5 As/Al 0.55 Ga 0.45 P intermediate layers has been …

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers
directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs …

Room-temperature CW laser operation at 7125 Å has been achieved in a (Ga1− xAlxAs, x̃0.
27) single quantum well double heterostructure (SQW-DH) diode laser. The laser consists of …

GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were
demonstrated. The optical quality of the QW was improved by optimizing the growth …

We report room temperature (RT) continuous-wave (CW) lasing of quantum well (QW) lasers
grown on (001) Si substrates emitting at 980 nm. Two different QW structures, including …

Conference title, upper and lower case, bolded, 18 point type, centered Page 1 CW-lasing 980
nm InGaAs/GaAs/GaAsP QW lasers monolithically grown on (001) Si Qi Lin, Jie Huang, Liying …

We describe the construction and room‐temperature (300 K) continuous (cw) operation of p‐
n diode Al x Ga1− x As‐GaAs quantum well heterostructure (QWH) lasers grown on Si …

A low-threshold AlGaAs/GaAs patterned quantum well laser has been fabricated on a V-
grooved GaAs/Si substrate using metal-organic chemical vapor deposition. High-resolution …